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Bulletin I27201 rev. A 01/06 GA100TS60SF "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features * * * * * Standard Speed PT Igbt Technology Fred PT Antiparallel diodes with Fast recovery Very Low Conduction Losses Al2O3 DBC UL Pending VCES = 600V IC = 220A DC VCE(on) typ. = 1.39V @ IC = 200A TJ = 25C Benefits * * * * * Optimized for high current inverter stages (AC TIG welding machines) Direct mounting to heatsink Hard switching operation frequency up to 1 KHz Very low junction-to-case thermal resistance Low EMI INT-A-PAK Absolute Maximum Ratings Parameters V CES IC I CM I LM V GE V ISOL PD Collector-to-Emitter Voltage Continuos Collector Current Pulsed Collector Current Peak Switching Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation @ TC = 25C @ TC = 100C @ TC = 25C @ TC = 130C Max 600 220 100 440 440 20 2500 780 312 Units V A V W www.irf.com 1 GA100TS60SF Bulletin I27201 rev. A 01/06 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameters VBRCES V CE(on) Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min Typ Max Units Test Conditions 600 1.11 1.39 1.08 1.28 1.22 6 1 10 1.44 1.25 1.96 1.54 250 nA V mA V V GE = 0V, I C = 1mA V GE = 15V, I C = 100A IC = 200A V GE = 15V, I C = 100A, T J = 125C I C = 0.25mA V GE = 0V, V CE = 600V V GE = 0V, V CE = 600V, T J = 125C I C = 100A, V GE = 0V I C = 100A, V GE = 0V, T J = 125C V GE = 20V V GE(th) I CES VFM I GES Gate Threshold Voltage Collector-to-Emiter Leakage Current Diode Forward Voltage drop Gate-to-Emitter Leakage Current 3 Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameters Qg Qge Qgc tr tf Eon Eoff Ets Eon Eoff Ets Cies Coes Cres trr Irr Qrr trr Irr Qrr Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Rise Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Current Diode Recovery Charge Diode Reverse Recovery Time Diode Peak Reverse Current Diode Recovery Charge Min Typ 640 108 230 0.45 1.0 4 23 27 6 35 41 16250 1040 190 91 10.6 500 180 17 1633 Max Units Test Conditions 700 120 300 s 6 29 35 12 40 52 mJ nC IC = 100A V CC = 400V VGE = 15V IC = 100A, VCC = 480V, VGE = 15V Rg = 15 mJ IC = 100A, VCC = 480V, VGE = 15V Rg = 15, TJ = 125C pF 155 15 900 344 20.5 2315 ns A nC ns A nC VGE = 0V VCC = 30V f = 1.0 MHz IF = 50A, dIF /dt = 200A/s VRR = 200V IF = 50A, dIF /dt = 200A/s VRR = 200V TJ = 125C Thermal- Mechanical Specifications Parameters TJ TSTG R thJC R thCS T Operating Junction Temperature Range Storage Temperature Range Junction-to-Case Case-to-Sink Mounting torque Weight per Switch Per Diode Per Module Case to heatsink Case to terminal 1, 2, 3 185 0.1 4 3 Nm g Min - 40 - 40 Typ Max 150 125 0.16 0.48 Units C C/ W 2 www.irf.com GA100TS60SF Bulletin I27201 rev. A 01/06 1000 Vge = 15V IC, Collector-to-Emitter Current (A) 1000 IC , Collector-to-Emitter Current (A) T J = 125C 100 T J = 25C 100 10 Vce = 10V 380s PULSE WIDTH Tj = 25C Tj = 125C 10 0.6 0.8 1 1.2 1.4 1.6 1.8 1 5.5 6.5 7.5 8.5 VCE, Collector-to-Emitter Voltage (V) Fig. 1 - Typical Output Characteristics VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Transfer Characteristics 240 200 160 120 80 40 0 25 VCE, Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) 1.5 I C = 200A 1.3 1.1 I C = 100A I = 50A 0.9 50 75 100 125 150 0.7 25 50 75 100 125 150 TC, Case Temperature (C) Fig. 3 - Maximum Collector Current vs. Case Temperature TJ, Junction Temperature (C) Fig. 4 - Typical Collector-to-Emitter Voltage vs. Junction Temperature www.irf.com 3 GA100TS60SF Bulletin I27201 rev. A 01/06 20 VGE, Gate-to-Emitter Voltage (V) Vcc = 400V Ic = 100A Switching Losses (mJ) 35 Tj = 25C, Vce = 480V 30 Vge = 15V, Ic = 100A 15 25 20 15 10 5 Eoff 10 Eon 5 0 0 100 200 300 400 500 600 700 QG, Total Gate Charge (nC) Fig. 5 - Typical Gate Charge vs. Gate-toEmitter Voltage 0 10 20 30 40 50 RG, Gate Reistance () Fig. 6 - Typical Switching Losses vs Gate Resistance 60 50 Switching Losses (mJ) Tj = 125C Vce = 480V Vge = 15V Rge = 15 Eoff 40 30 20 10 0 0 40 80 120 160 IC, Collector-to-Emitter Current (A) Eon Fig. 7 - Typical Switching Losses vs Collector-to-Emitter Current 4 www.irf.com GA100TS60SF Bulletin I27201 rev. A 01/06 1000 1000 Vr = 200V Instantaneous Forward Current - I F (A) 100 Tj = 125C t rr (ns) If = 50A, Tj = 125C 100 If = 50A, Tj = 25C 10 Tj = 25C 1 0 0.5 1 1.5 2 2.5 Forward Voltage Drop- VFM (V) Fig. 8 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 10 100 di f /dt - A/s 1000 Fig. 9 - Typical Reverse Recovery vs. dif /dt 100 10000 Vr = 200V Vr = 200V If = 50A, Tj = 125C If = 50A, Tj = 125C 10 Q RR (nC) I RRM (A) 1000 If = 50A, Tj = 25C If = 50A, Tj = 25C 1 100 1000 100 100 1000 di f /dt - A/s Fig. 10 - Typical Reverse Recovery Current vs. dif /dt dif /dt - A/s Fig. 11 - Typical Stored Charge vs. dif /dt www.irf.com 5 GA100TS60SF Bulletin I27201 rev. A 01/06 Outline Table All dimensions are in millimeters Ordering Information Table Device Code GA 100 1 2 T 3 S 4 60 5 S 6 F 7 1 2 3 4 5 6 7 - Essential Part Number IGBT modules Current rating Int-A-Pak Voltage Code Speed/ Type Diode Type (60 = 600V) (S = Standard Speed IGBT) (100 = 100A) Circuit Configuration (T = Half Bridge) 6 www.irf.com GA100TS60SF Bulletin I27201 rev. A 01/06 Data and specifications subject to change without notice. This product has been designed for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 01/06 www.irf.com 7 |
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